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Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Description. Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, IRF740 . IRF741. IRF742. IRF743. Maximum Ratings. Symbol. Characteristic. Rating. IRF340/342. IRF740 /742. MTM8N40. Rating. IRF341/343. IRF741/743. DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
| Part Number | IRF740 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 400V 10A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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