Description
May 13, 1998 IRF5210 . HEXFET Power MOSFET. PD - 91434A. Fifth Generation HEXFETs from International Rectifier utilize advanced processing May 13, 1998 Uses IRF5210 data and test conditions. Source-Drain Ratings and Characteristics. Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS. Apr 8, 2009 Absolute Maximum Ratings. Parameter. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. A. ID @ TC = 100 C Continuous Drain IRF5210 . DRVP. 10 k. J3Q1. J3L1. J3D1. J3R1. J3C1. R17. R15. J2R1. J2D1. UUT1. J2C1. Figure 1 PWM5031-EVAL Board Buck Converter Configuration -100 Volt, 0.08 Ohm, -34A MOSFET. Fast Switching. Low RDS (on). Electrically Equivalent to IRF5210 . Add an S to the end of the part number for S-100
Part Number | IRF5210 |
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IRF5210
IR
10
1.64
HK ZHONG QIANG TECHNOLOGY CORPORATION LIMITED
IRF5210
IR/VISHAY
50000
2.9875
C & I Semiconductors Co., Limited
IRF5210
INFINEON
168
4.335
HK FEILIDI ELECTRONIC CO., LIMITED
IRF5210
IR
5000
5.6825
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd
IRF5210
Infineon
2000
7.03
ShenZhen GIC Co., Ltd