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Part Number IPD33CN10NGATMA1
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand
Description MOSFET N-CH 100V 27A TO252-3
Series OptiMOS
Packaging Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Rds On (Max) @ Id, Vgs 33 mOhm @ 27A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.05   Highest Price: $2.21
1 - 5 of 5 Record(s)
Part Number
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Qty
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Part Number:

IPD33CN10NGATMA1

Brand:

INFINEON

D/C:
Qty:

381

Price (USD):

0.05

Company:

N&S Electronic Co., Limited

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Part Number:

IPD33CN10NGATMA1

Brand:

TI

D/C:
Qty:

1000

Price (USD):

0.59

Company:

HK FEILIDI ELECTRONIC CO., LIMITED

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Part Number:

IPD33CN10NGATMA1

Brand:

Infineon

D/C:
22+
Qty:

32500

Price (USD):

1.13

Company:

HONGKONG SINIKO ELECTRONIC LIMITED

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Part Number:

IPD33CN10NGATMA1

Brand:

Infineon

D/C:
21+
Qty:

30000

Price (USD):

1.67

Company:

USEMI LIMITED

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Part Number:

IPD33CN10NGATMA1

Brand:

Infineon

D/C:
24+
Qty:

10000

Price (USD):

2.21

Company:

HongKong Chi Yuet Electronics Co.,Limited

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IPD33CN10NGATMA1 Ref.

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