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Description
IHW30N160R2 . Soft Switching Series. Power Semiconductors. 1. Rev. 2.1 Nov 09. TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode. IHW30N160R2 . Issued. 24. December 2015. MA#. MA000792408. Package. PG- TO247-3-44. Weight*. 6060.17 mg. Construction Element. Material Group. IKW30N60H3. IHW30N110R3. IHW30N120R3. IHW30N135R3. IHW30N160R2 . 40A. IHW40T60. IHW40N60R. IHW40N60RF. IKW40N120R3. IHW40N135R3. Oct 17, 2016 IHW30N160R2 . 40 A. IHW40N120R3. IHW40N135R3. Active & preferred. New! 9 . 2016-10-17. Copyright Infineon Technologies AG 2016.
| Part Number | IHW30N160R2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | |
| Description | IGBT 1600V 60A 312W TO247-3 |
| Series | TrenchStop |
| Packaging | Tube |
| IGBT Type | NPT, Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1600V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 90A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 312W |
| Switching Energy | 4.37mJ |
| Input Type | Standard |
| Gate Charge | 94nC |
| Td (on/off) @ 25°C | -/525ns |
| Test Condition | 600V, 30A, 10 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Image |  |
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