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Page 1. IC, nom. 300. A. IC. 480. A min. typ. max. -. 1,7. 2,15. V. -. 2,0. -. V. nA. IGES gate emitter leakage current. VCE= 1200V, VGE= 0V, Tvj= 25 C. ICES. Page 1. Semiconductor Group. 1. IGBT (Insulated Gate Bipolar Transistor). 1 Differences Between MOSFET and IGBT. 1.1 Structure. The IGBT combines in it Page 1. Insulated Gate Bipolar Transistor (IGBT) Basics. Abdus Sattar, IXYS Corporation. 1. IXAN0063. This application note describes the basic
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