Description
FS75R17KE3 . IGBT-Module. IGBT-modules prepared by: MW approved by: WR date of publication: 2013-10-03 revision: 2.0. Vorl ufige Daten. Preliminary Data. FS75R17KE3 . IGBT- . IGBT-modules prepared by: MW approved by: WR date of publication: 2013-10-03 revision: 2.0. . Preliminary Data. IGBT, FS75R17KE3 . IGBT- . IGBT-modules prepared by: MW approved by: WR date of publication: 2013-10-03 revision: 2.0. . Preliminary Data. Emitter Controlled-Diode is Infineon unique Fast Recovery Diode technology. The Ultrathin wafer and field-stop technology makes the Emitter Controlled-Diode Jul 1, 2014 strongly on module design and mounting technology and can therefore not be specified for a bare die. Application example. FS75R17KE3 .
Part Number | FS75R17KE3 |
Brand | |
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FS75R17KE3
INFINEON
110
0.78
D-Tech HongKong Electronics Limited
FS75R17KE3
500
1.9
HTCX TECHNOLOGY (HK)LIMITED
FS75R17KE3
INFINEON
100
3.02
HK FEILIDI ELECTRONIC CO., LIMITED
FS75R17KE3
Infineon
5000
4.14
FuXinHui (HK) Electronics Limited
FS75R17KE3
INFINEON
100
5.26
RX ELECTRONICS LIMITED