Description
Technische Information / Technical Information. FS200R12KT4R . IGBT-Module. IGBT-modules prepared by: CM approved by: RS date of publication: 2013-11- 1. / Technical Information. FS200R12KT4R . IGBT- . IGBT-modules prepared by: CM approved by: RS date of publication: 2013-11-05 revision: 2.0. FS200R12KT4R . IGBT- . IGBT-modules prepared by: CM approved by: RS date of publication: 2013-11-05 revision: 2.0. . Preliminary Data. Emitter Controlled-Diode is Infineon unique Fast Recovery Diode technology. The Ultrathin wafer and field-stop technology makes the Emitter Controlled-Diode technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet. FS200R12KT4R . Rev. 2.0, 05.11.2013
Part Number | FS200R12KT4R |
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FS200R12KT4R
INFINEON
1200
0.9
USEMI LIMITED
FS200R12KT4R
infineo
1100
2.2025
ALLCHIPS ELECTRONICS LIMITED
FS200R12KT4R
INFINEON
1200
3.505
Circle World Electronics Ltd.
FS200R12KT4R
INFINEON
1000
4.8075
CRD TECHNOLOGY (HK) LIMITED
FS200R12KT4R
Infineon
30000
6.11
USEMI LIMITED