Description
DATASHEET 1. Technische Information / Technical Information. FS150R07N3E4 . IGBT-Module . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11- FS150R07N3E4 . IGBT- . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11-05 revision: 2.0. . Preliminary Data. 1. / Technical Information. FS150R07N3E4 . IGBT- . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11-05 revision: 2.0. FS150R07N3E4 . 650. 150. 0.35. 1.55. FS200R07N3E4R. 650. 200. 0.25. 1.55. 1200V. FS75R12KT4_B15. 1200. 75. 0.39. 1.85. FS100R12KT4G. 1200. 100. design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet. FS150R07N3E4 . Rev.
Part Number | FS150R07N3E4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | |
Description | IGBT MODULE 650V 150A |
Series | * |
IGBT Type | Trench Field Stop |
Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 150A |
Power - Max | 430W |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 150A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 9.3nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Image |
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