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DATASHEET 1. Technische Information / Technical Information. FS150R07N3E4 . IGBT-Module . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11- FS150R07N3E4 . IGBT- . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11-05 revision: 2.0. . Preliminary Data. 1. / Technical Information. FS150R07N3E4 . IGBT- . IGBT-modules prepared by: AS approved by: RS date of publication: 2013-11-05 revision: 2.0. FS150R07N3E4 . 650. 150. 0.35. 1.55. FS200R07N3E4R. 650. 200. 0.25. 1.55. 1200V. FS75R12KT4_B15. 1200. 75. 0.39. 1.85. FS100R12KT4G. 1200. 100. design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet. FS150R07N3E4 . Rev.

Part Number FS150R07N3E4
Main Category Discrete Semiconductor Products
Sub Category Transistors - IGBTs - Modules
Brand
Description IGBT MODULE 650V 150A
Series *
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 150A
Power - Max 430W
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 150A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Image Discrete Semiconductor Products - Transistors
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FS150R07N3E4

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FS150R07N3E4_B11

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FS150R07N3E4_B11

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FS150R07N3E4

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Infineon

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Hongkong Yunling Electronics Co.,Limited

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FS150R07N3E4

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INFINEON

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