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Description
Product Overview. FQP33N10 : N-Channel QFET MOSFET 100V, 33A, 52m . For complete documentation, see the data sheet. This N-Channel enhancement Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQP33N10 . FQP33N10 . Jan 13, 2017 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP33N10 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. Mar 13, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low
| Part Number | FQP33N10 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 100V 33A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 127W (Tc) |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 16.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
Hot Offer
FQP33N10
ON SEMI
16000
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6000
1.3825
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INSO (INCREDIBLE SOLUTION) HK LIMITED
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