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Description

FHX35X . GaAs FET & HEMT Chips. NF & Gas vs. IDS. DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE. OUTPUT POWER vs. INPUT POWER. FHX35X NOISE PARAMETERS. VDS=3V, IDS=10mA. DESCRIPTION. The FHX35X /002 Chip and FHX35LG/002 packaged devices are HEMT. (High Electron Mobility Transistor) ones suitable for use as the front end. DESCRIPTION. The FHX35X is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2 to. FHX35X HEMT as the active device and has an output power of 30 mW, drain 3.2 30 mW FHX35X Class-E Amplifier. 3.2.1 Transistor Output Capacitance The HEMT in our bridge is an unpackaged FHX35X transistor manufactured by the Fujitsu Corp, and has a wide ( 280 m) channel fabricated