(5/5) based on 10 customer reviews
Description
The FDS6680AS is designed to replace a single SO-8. MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to. Nov 1, 2004 FDS6680A . Single N-Channel, Logic Level, PowerTrench. . MOSFET. General Description. This N-Channel Logic Level MOSFET is produced. Jul 14, 2015 FDS6680AS . SOIC-8 (CuBW). Jul 14, 2015. 1.0. SUBCON. 0.087918 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jul 14, 2015 FDS6680AS . SOIC-8 (CuBW). SUBCON. SUBCON. 0.087918. 1. Terminal. Finish . Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp.
| Part Number | FDS6680AS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 30V 11.5A 8SOIC |
| Series | PowerTrench, SyncFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 11.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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