Description
FDS4435 Rev F1(W). Electrical Characteristics. TA = 25 C unless otherwise noted. Symbol. Parameter. Test Conditions. Min Typ Max Units. Off Characteristics. Aug 8, 2014 Certificate of Compliance. FSID. Material. Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS4435 . SOIC-8. Zetex. 1. Q100. FDS4435 . MOSFET, Pch, -30V, -8.8A, 20-milliohm. SO8. FDS4435 . Fairchild. 1. Q12. IRF6216. MOSFET, P-ch, 150-V, 2.2-A, 240- milliOhms. SO8.
Part Number | FDS4435 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET P-CH 30V 8.8A 8-SOIC |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1604pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
FDS4435_NL
FAIRCHILD/
2010000
1.9
Ande Electronics Co., Limited
FDS4435 SOP8
FAIRCHILD/
10085
2.985
Ande Electronics Co., Limited
FDS4435
FAIRCHILD
292
4.07
Yingxinyuan INT'L (Group) Limited
FDS4435_NL
FDS
63289
5.155
ATLANTIC TECHNOLOGY LIMITED
FDS4435
FAIRCHILD
63289
6.24
ATLANTIC TECHNOLOGY LIMITED