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Description
FDMS7682 . FDMS7682 . PQFN-8. (TFSnCuBW). Jul 07, 2016. 1.0. GEM. 0.105957 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Product Overview. FDMS7682 : 30V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET has been Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS7682 . Feb 16, 2009 Notes: a. Based on TC = 25 C. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). 2012 3 31 FDMS7682 . 4. 1. 5. 3 2. 6789. 1. C329. 0.1uF 16V. 1. C615. 10uF 6.3V. 2. 1. L6. 3.3UH 30%2.6A100mohm. 1. C308. 1uF 6.3V. 1. C326. 1uF 6.3
| Part Number | FDMS7682 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 30V 22A POWER56 |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1885pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 33W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 14A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6), Power56 |
| Package / Case | 8-PowerTDFN |
| Image |  |
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