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Description
Datasheet Jan 1, 2014 General Description. The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon. Jun 1, 2012 June 2012. 2012 Fairchild Semiconductor Corporation. FDMC7660 Rev.C5 www.fairchildsemi.com. 1. FDMC7660 N-Channel PowerTrench. Aug 9, 2014 FDMC7660S . FDMC7660S . Power 33 8-L(PQFN 3.3x3.3 S&G. Clip NoBW). INTERNAL CEBU. 0.070623 g. Each. Terminal Finish. Base Alloy. Jan 23, 2015 FDMC7660S . PQFN-8 (3.3x3.3) (S&G Clip) (NoBW).csv. FSCP. FSCP. 0.070623. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. FdMc7660s single. 30. 20. 3.0. 21.0. 5.0. 18.0. FdMc7660 single. 30. 20. 3.3. 24.0. 5.6. 18.0. FdMc7664 single. 30. 20. 5.5. 25.0. 6.0. 18.8. FdMc7672 single.
| Part Number | FDMC7660S |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 30V POWER33 |
| Series | PowerTrench, SyncFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4325pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Package / Case | 8-PowerTDFN |
| Image |  |
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