Description
Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDBL0150N80 . IP & Fab Processes. 55 nm, analog-focused CMOS/BCDMOS process technologies utilizing internal fabs and external foundry partners. Low, medium, high
Part Number | FDBL0150N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET N-CH 80V 300A |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 188nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12800pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 429W (Tj) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PSOF |
Package / Case | 8-PowerSFN |
Image |
Hot Offer
FDBL0150N80
21+
2000
0.04
Shenzhen HYC Electronic&Technology Co.,Ltd
FDBL0150N80
ON
1798
0.625
HEXING TECHNOLOGY (HK) LIMITED
FDBL0150N80
ON
29760
1.21
Guofanghui (Hong Kong) Technology Co., Limited
FDBL0150N80
onsemi
5000
1.795
JINGCHENG HK LIMITED
FDBL0150N80
ON
10000
2.38
Sino Star Electronics (HK) Co.,Limited