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Description
DATASHEET May 1, 2014 FDH50N50 / FDA50N50 N-Channel UniF. ET. TM. MOSFET. 2012 Fairchild Semiconductor Corporation. FDH50N50 / FDA50N50 Rev. C2. Jul 18, 2016 FDA50N50 . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. Jul 18, 2016 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FDA50N50 . FDA50N50 . TO3PN-3. Single. 0.16. 110. 28.4. 310. TO-3P. FDH50N50. N. 500. Single. 0.105. 105. 48. 625. TO-247. FDA50N50 . N. 500. Single. 0.105. 105. 48. 625. TO-3P. FQA19N60.
| Part Number | FDA50N50 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 500V 48A TO-3P |
| Series | UniFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 137nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 24A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Image |  |
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