Description
TRANS GAN 100V 1A BUMPED DIE Series: eGaN? Amplifier Type: -40°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: Die Connector Type: Die Function: Logic Type: Number of Channels: Proto Board Type: Resistance (Ohms): Voltage - Off State: Circuit: Direction: Inputs - Side 1/Side 2:
Part Number | EPC2036 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | TRANS GAN 100V 1A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs | 0.91nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 50V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 1A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
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