(4/5) based on 7 customer reviews
Description
CSD19534Q5A . SLPS483 MAY 2014. CSD19534Q5A 100 V N-Channel NexFET Power MOSFETs. 1 Features. Product Summary. 1 Ultra-Low Qg and Qgd. May 21, 2015 CSD19534Q5A . GND. 4.7 F. C10. GND. GND. GND. 10 F. C25. GND. 4. 7. ,8. 1. ,2. ,3. 5. ,6. ,. Q2. CSD19534Q5A . 68pF. C34. 78.7k. R28. Jan 8, 2016 CSD19534Q5A . 4 G. 1. S. 2 3. 5 D Q3. CSD19534Q5A . L2. 22 uH. 18.7A sat, 16 mOhms max. XAL1510-223ME. Coilcraft. 15.4 x 16.4 x 10 mm. R48. P9V_36V. GND. 1000pF. 25V. 10%. C31. GND. Place C7 close to pin 19. GND. P9V_36V. ON: 9.0V. OFF: 8.5V. 5. 4. 1. 6 7 8. 2 3. Q16. CSD19534Q5A . EN . (two full-bridges). OC. 4. OVS. Bias current for bipolar sensing comp. OR latch. TIDA-00365 #1 Full-Bridge Power Stage. 4 x CSD19534Q5A . RESET comp. PoL: .
| Part Number | CSD19534Q5A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 100V 50 8SON |
| Series | NexFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 63W (Tc) |
| Rds On (Max) @ Id, Vgs | 15.1 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON (5x6) |
| Package / Case | 8-PowerTDFN |
| Image |  |
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