(5/5) based on 6 customer reviews
Description
CSD19505KCS 80 V N-Channel NexFET Power MOSFET. 1 Features. Product Summary. 1 Ultra-Low Qg and Qgd. TA = 25 C. TYPICAL VALUE. UNIT. Oct 18, 2014 Qty. Eco Plan. (2). Lead/Ball Finish. (6). MSL Peak Temp. (3). Op Temp ( C). Device Marking. (4/5). Samples. CSD19505KCS . ACTIVE. TO-220. performance controller and driver for standard and. Systems logic-level N- channel MOSFET power devices used. Up to 600-kHz Operating Frequency for. Apr 22, 2014 l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies. Single. TO-220. 55 to 175. CSD19505KCS . 80. 20. 2.6. 208. 2.6. 76. 11. 25. Single. TO-220. 55 to 175. CSD19506KCS. 80. 20. 2.5. 273. 2. 120. 20. 37. Single.
| Part Number | CSD19505KCS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 80V 150A TO-220 |
| Series | NexFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7820pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 100A, 6V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
Hot Offer
CSD19505KCS
TI
3051
0.34
Anterwell Technology Ltd
CSD19505KCS
TI
2150
1.14
INSO (INCREDIBLE SOLUTION) HK LIMITED
CSD19505KCS
TI
8
1.94
FAST-IC INTERNATIONAL CO., LTD
CSD19505KCS
TI
10000
2.74
ANSOYO ELECTRONIC LIMITED
CSD19505KCS
MICROCHIP
36000
3.54
Z.H.T TECHNOLOGY HK LIMITED
