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Description
ABSTRACT. SiC MOSFETs are gaining popularity in many high-power applications due to their significant switching performance advantages. SiC MOSFETs Dec 8, 2015 The base of a power electronic design is the interaction of power losses of an IGBT module with the thermal impedance of the power electronic in a high side-low side configuration. Table 4. UCC21520 Design Requirements. PARAMETER. VALUE. UNITS. Power transistor. C2M0080120D . -. VCC. 5.0. V. Power MOSFETs (Metal Oxide Semiconductor Field Effect. Transistor) are the most commonly used power devices due to their low gate drive power, fast
| Part Number | C2M0080120D |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 1200V 31.6A TO247 |
| Series | C2M |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 1000V |
| Vgs (Max) | +25V, -10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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