Description
Nov 29, 2012 BSP135 . SIPMOS. . Small-Signal-Transistor. Features. N-channel. Depletion mode. dv /dt rated. Available with V GS(th) indicator on reel. BSP135 . SOT-223. 600. 45. -1. -2.1. 20. BSS159N. SOT-23. 60. 3.5. -2.4. -3.5. 130. BSS169. SOT-23. 100. 6. -1.8. -2.9. 90. BSS139. SOT-23. 250. 14. -1. -2.1. 30. Sep 22, 2015 BSP135 depletion MOSFET. SOT223. INFINEON. BSP135 . R1. 10k film resistor. R0805. R10. 4R99 film resistor. R0805. R11. 2K film resistor. Oct 13, 2016 MOSFET. OptiMOSTM 5 Power-Transistor, 100 V. Features. Ideal for high frequency switching and sync. rec. Excellent gate charge x Material Content Data Sheet. Sales Product Name. BSP135 H6906. Issued. 29. August 2013. MA#. MA001091872. Package. PG-SOT223-4-21. Weight*.
Part Number | BSP135 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET N-CH 600V 120MA SOT-223 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 25V |
Vgs (Max) | - |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 45 Ohm @ 120mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
Hot Offer
BSP135
INFINEON
400
1.7
E-Core Electronics Co.
BSP135 H6327
Infineon
1000
2.8775
MINGERDA ELECTRONICS (HK) LIMITED
BSP135
Infineon()
3050
4.055
Ande Electronics Co., Limited
BSP135 H6906
INFINEON/
10300
5.2325
Ande Electronics Co., Limited
BSP135
Infineon
3000
6.41
HongKong XingYiLong Electronic Technology Co., Limited