(4/5) based on 3 customer reviews
Description
DATASHEET Feb 12, 2013 BSC010NE2LS . OptiMOSTM. Power-MOSFET. Features. Optimized for high performance Buck converter. Very low on-resistance R DS(on) Tpackage_MAX = 90 C. CanPAK . BSB009N03LS. VOUT = 12V. IOUT = 20A continuous. Tpackage_MAX = 70 C. SuperSO8. BSC010NE2LS . VOUT = 12V. GL = 2 x BSC010NE2LS . VOUT = 3.3V. VOUT = 1.0V. VOUT = 1.5V. VOUT = 1.2 V. VOUT = 1.8V. VOUT = 2.5V. fSW = 400kHz. July 13, 2012. FN7832.1 of a Power-MOSFET (OptiMOS 25V, BSC010NE2LS [1]). The blue s . an Infineon power MOSFET ( BSC010NE2LS ) is shown. The five line (blue line), the Oct 20, 2014 MOSFETs (Manufacturer PN: BSC010NE2LS ) are connected in parallel across VOUT and PGND next to the remote voltage sensing location
| Part Number | BSC010NE2LS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 25V 39A TDSON-8 |
| Series | OptiMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image |  |
Hot Offer
BSC010NE2LS
Infineon(英飞凌)
1130
1.2
ALLCHIPS ELECTRONICS LIMITED
BSC010NE2LS
INFINEON
5000
2.53
HEXING TECHNOLOGY (HK) LIMITED
BSC010NE2LS
INFINEON
17000
3.86
CIS Ltd (CHECK IC SOLUTION LIMITED)
BSC010NE2LS
INFINEON
18000
5.19
Ande Electronics Co., Limited
BSC010NE2LS
INFINEON
2000
6.52
ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED
