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Rated (5/5) based on 5 customer reviews
Part Number BSB028N06NN3 G
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand
Description MOSFET N-CH 60V 22A WDSON-2
Series OptiMOS
Packaging
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 30A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M
Package / Case 3-WDSON
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.59   Highest Price: $4.5
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Part Number:

BSB028N06NN3 G

Brand:

INFINEON/英飞凌

D/C:
21+
Qty:

149986

Price (USD):

1.59

Company:

Shenzhen Keshijin Electronics Co.,Ltd

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D/C
Qty
Price (USD)
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Part Number:

BSB028N06NN3 G

Brand:

Infineon

D/C:
Qty:

2240

Price (USD):

2.3175

Company:

Central Asia HK Trading Co. , Limited

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Part Number:

BSB028N06NN3 G

Brand:

INFINEON

D/C:
Qty:

5620

Price (USD):

3.045

Company:

Alphatec Enterprise Corp Limited

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Part Number:

BSB028N06NN3

Brand:

Infineon

D/C:
20+
Qty:

4650

Price (USD):

3.7725

Company:

Georlin Technology Ltd

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Part Number:

BSB028N06NN3 G

Brand:

INFINEON TECHNOLOGIES AG

D/C:
22+
Qty:

3000

Price (USD):

4.5

Company:

ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED

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BSB028N06NN3 Ref.

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