(5/5) based on 5 customer reviews
Description
BCP69T1G , NSVBCP69T1G. PNP Silicon. Epitaxial Transistor. This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. VCE(sat). Max (V). IC. Continuo us (A). V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. BCP69T1G . AEC. Qualified. Pb-free. transistors. ON Semi BCP69T1G . R1 R4. 4. 2.7k 5% resistors (0603). R5, R6. 0. Not installed, resistors (0603). R7. 1. 4.7k 5% resistor (0603). R8 R11. 4. Rating. Symbol. Value. Unit. Collector-Emitter Voltage. VCEO. 20. Vdc. Collector- Base Voltage. VCBO. 25. Vdc. Emitter-Base Voltage. VEBO. 5.0. Vdc. Collector Jun 8, 2009 BCP69T1G . Test: Conditions: Interval: Results. HTRB. TA=150C,80% Rated Voltage. 1008 hrs. 0/240. Precondition MSL1@ 260C , 3 X IR at
| Part Number | BCP69T1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | |
| Description | TRANS PNP 20V 1A SOT223 |
| Series | - |
| Packaging | Cut Tape (CT) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Power - Max | 1.5W |
| Frequency - Transition | 60MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Image |  |
Hot Offer
BCP69T1G
ON(安森美)
3020
0.8
ALLCHIPS ELECTRONICS LIMITED
BCP69T1G
ON
3000
2
Hingtaiwai Industry(HK) limited
BCP69T1G
ON
100
3.2
Ulike electronics co.,Limited
BCP69T1G
ON
2180
4.4
SIC ELECTRONICS LIMITED
BCP69T1G
onsemi
8509
5.6
N&S Electronic Co., Limited
