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Description
AON7518 . Symbol. Min. Typ. Max. Units. BVDSS. 30. V. VDS=30V, VGS=0V. 1. TJ=55 C. 5. IGSS. 100. nA. VGS(th). Gate Threshold Voltage. 1.3. 1.8. 2.5. V. This AOS product reliability report summarizes the qualification result for AON7518 . Accelerated environmental tests are performed on a specific sample size, Title AON7518 Marking Description. DFN3X3 PACKAGE MARKING DESCRIPTION. 49. O. NOTE: LOGO - AOS Logo. 7518 - Part number code. F - Fab code. Page 1. 1. D. 2. D. 3. D. 4. D. D. 5. G. 6. S. 7. S. 8. S. P0095-01. VGS - Gate-to- Source Voltage - V. R. D. S. (o n. ) - O n. -S ta te. R e s is ta n c e. - m. . 0. 1. 2.
| Part Number | AON7518 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH DFN 3X3 |
| Series | AlphaMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1086pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 23W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (3x3) |
| Package / Case | 8-VDFN Exposed Pad |
| Image |  |
AON7518
AOS
5000
0.73
HT ELECTRONICS (HK) CO.,LIMITED
AON7518
AO
850000
1.05
Far East Electronics Technology Limited
AON7518
AOS
37830
1.37
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
AON7518
AOS
5000
1.69
Viscre Technology Co., Limited
AON7518
AOS
5211
2.01
HK TWO L ELECTRONIC LIMITED
