(4/5) based on 10 customer reviews
Description
The AON7402 uses advanced trench technology to provide excellent RDS(ON) with Repetitive avalanche energy L =0.1mH C. mJ. Avalanche Current C. 10.8. TA = 25oC, VIN = 12 V, VOUT = 3.3 V, L = 4.7 H, COUT = 2 100 F, fSW = 500 Vishay. SiA430DJ. 20. 10.8. 18.5. 5.3. AOS. AON7402 . 30. 39. 15. 7.1. AOS. Operating conditions: TA = 25oC, VIN = 12 V, VOUT = 3.3 V, L = 2.2 H, COUT Vishay. SiA430DJ. 20. 10.8. 18.5. 5.3. AOS. AON7402 . 30. 39. 15. 7.1. AOS. TA = 25 C, VIN = 12 V, VOUT = 3.3 V, L = 2.2 H, COUT = 2 100 F, fSW = 600 Vishay. SiA430DJ. 20 V 10.8 A 18.5 m 5.3 nC. AOS. AON7402 . 30 V 39 A. Operating conditions: TA = 25 C, VIN = 12 V, VOUT = 3.3 V, L = 4.7 H, COUT Vishay. SiA430DJ. 20 V 10.8 A 18.5 m 5.3 nC. AOS. AON7402 . 30 V 39 A.
| Part Number | AON7402 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH DFN |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 26W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Package / Case | 8-VDFN Exposed Pad |
| Image |  |
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