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Description
The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and . This AOS product reliability report summarizes the qualification result for AON7200 . Accelerated environmental tests are performed on a specific sample size, ID-0095 6. Version B. Title AON7200 Marking Description. DFN3X3 PACKAGE MARKING DESCRIPTION. NOTE: LOGO - AOS Logo. 7200 - Part number code. Features. Qualified for Bluetooth SIG v4.2 specifications. Certified for FCC, IC, MIC, KCC, NCC, and SRRC radio regulations. Certified by European R&TTE The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two
| Part Number | AON7200 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH DFN |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 62W (Tc) |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3x3) |
| Package / Case | 8-VDFN Exposed Pad |
| Image |  |
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