(4/5) based on 8 customer reviews
Description
The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the. 1. AOS Semiconductor. Product Reliability Report. AOD413A , rev D. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc www.aosmd.com ALPHA & OMEGA. SEMICONDUCTOR. Document No. ID-00665. Version. C. Title. AOD413A Marking Description. DPAK PACKAGE MARKING DESCRIPTION . Mar 23, 2010 Alpha & Omega. Semiconductor. AOD413A . FETs.IntLib. AOD413A . 22. Q300. MOSFET. 60V. SOT-23. 0.26A, 0.81nC, rDS(on) @ 4.5V =3 ohm.
| Part Number | AOD413A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET P-CH 40V 12A TO252 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1125pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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