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Description
The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost. This AOS product reliability report summarizes the qualification result for AO4486 . Accelerated environmental tests are performed on a specific sample size, and Title AO4486 Marking Description. SO-S PACKAGE MARKING DESCRIPTION. HHHH q; 4486. FAYWLT. NOTE: LOGO - AOS Logo. 4486 - Part number code. Jan 28, 2002 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 250. mJ. IAR. Avalanche Current . 28. A. EAR. Repetitive AO4486 . SO-8. Single. General Purpose. N. No. No. 100. 20. 4.2. AO4892. SO-8. Dual. General Purpose. N. No. No. 100. 20. 4. AO4260. SO-8. Single. SMPS. N.
| Part Number | AO4486 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 100V 4.2A 8SOIC |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 942pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 79 mOhm @ 3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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