(4/5) based on 17 customer reviews
Description
Datasheet The AO4453 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load This AOS product reliability report summarizes the qualification result for AO4453 . Accelerated environmental tests are performed on a specific sample size, and Title AO44S3 Marking Description. SO-S PACKAGE MARKING DESCRIPTION. HHHH. @ 4453. FAYWLT. NOTE: LOGO - AOS Logo. AO4453 - Part number DESCRIPTION. QTY MANUFACTURER. 1. L1. Core, 6.5*3*3 Dip, 2.2uH, 6A, Rdson=5m . 1. Sunlord. 2. Q1. AO4453 , Rdson=19m at VGS = - 4.5 V. 1. AOS. 3. AO4453 ,Rdson=19m at GS=-4.5V. AOS. Q3. MMBT3906. Vishay. D1. SS12,Vf= 0.5V, 20V Schottky. Mccsemi. D2. IN4148, Vf=0.7V, 75V Fast Swith Diode.
| Part Number | AO4453 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET P-CH 12V 9A 8SOIC |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 6V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 9A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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