(4/5) based on 11 customer reviews
Description
The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or Review of final electrical test result confirms that AO4409 passes AOS quality and reliability requirements. The released product will be categorized by the Page 1. 1. AOS Semiconductor. Product Reliability Report. AOB5B65M1, rev A. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc. Page 1. 1. AOS Semiconductor. Product Reliability Report. AOD5B65M1, rev A. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc. Page 1. 1. AOS Semiconductor. Product Reliability Report. AOK20B120D1, rev a. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc.
| Part Number | AO4409 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET P-CH 30V 15A 8SOIC |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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