(5/5) based on 2 customer reviews
Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device Thermal Characteristics. Parameter. Units. Maximum Junction-to-Ambient AF t 10s. R JA. AO4404 . N-Channel Enhancement Mode Field Effect Transistor. Sep 25, 2007 Product Reliability Report. AO4404B /AO4404BL, rev A. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc. 495 Mercury Drive. Title AO4404B Marking Description. SO-8 PACKAGE MARKING DESCRIPTION. HHHH. 69 4404B. FAYWLT. PART NO. DESCRIPTION CODE. A04404B Green Nov 1, 2006 Review of final electrical test result confirms that AO4404 passes AOS quality and reliability requirements. The released product will be
| Part Number | AO4404B |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 30V 8.5A 8-SOIC |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 8.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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